Power Management - System-,DDR-,Chipset-,VGA-Power
Dual MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| SiZ998BDT-T1-GE3 | Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -16V SkyFET® low side MOSFET with integrated Schottky | Low rDS(on) rDS(on)=0.0049 / 0.00106 ohm Qg=12 / 52.2nC; VGSth=1.2V/1.1V | SMD PowerPAK SO-8 | ||
| SiZF906DT-T1-GE3 | Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -16V SkyFET® low side MOSFET with integrated Schottky | Low rDS(on) rDS(on)=0.0038 / 0.00117 ohm Qg=24.5 / 100nC; VGSth=1.1V/1.1V | SMD PowerPAK SO-8 | ||
| SiZF916DT-T1-GE3 | Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -12V SkyFET® low side MOSFET with integrated Schottky | Low rDS(on) rDS(on)=0.004 / 0.00125 ohm Qg=14.6 / 62nC; VGSth=1.1V/1.1V | SMD PowerPAK SO-8 | ||
| SiZF918DT-T1-GE3 | Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -12V SkyFET® low side MOSFET with integrated Schottky | Low rDS(on) rDS(on)=0.004 / 0.0019 ohm Qg=14.6 / 37nC; VGSth=1.1V/1.1V | SMD PowerPAK SO-8 |
H/L MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| SiRA10BDP-T1-GE3 | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID= 60A; rDS(on)=0.0036 ohm Qg= 24.1nC; VGSth= 1.2 V | SMD PowerPAK SO-8 | ||
| SiRA12BDP-T1-GE3 | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID= 60A; rDS(on)=0.0043 ohm Qg= 21nC; VGSth= 1.2 V | SMD PowerPAK SO-8 | ||
| SiRA14BDP-T1-GE3 | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID= 64A; rDS(on)=0.00538 ohm Qg= 14nC; VGSth= 1.1 V | SMD PowerPAK SO-8 | ||
| SiRA18BDP-T1-GE3 | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID= 40A; rDS(on)=0.00683 ohm Qg= 12.2nC; VGSth= 1.2V | SMD PowerPAK SO-8 | ||
| SiSHA12ADN-T1-GE | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID= 25A; rDS(on)=0.0043 ohm Qg=29.5nC; VGSth= 1.1V | SMD PowerPAK 1212-8SH | ||
| SISHA14DN-T1-GE3 | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFET | Low rDS(on) ID=-20A; rDS(on)=0.0051 ohm Qg= 19.4nC; VGSth= 1.1V | SMD PowerPAK 1212-8SH |
Inductors
| Product Name | Status | Description | Features | Package | Q-Level |
| IHLP1616BZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Ultra Miniature Power | Profile height ≤ 2 mm; 0.47 μH to 4.7 μH; IDC up to 12.8 A; | SMD 1616 4.8x4.8x2.0mm | ||
| IHLP2525CZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Miniature Power | Profile height ≤ 3 mm 0.1 μH to 10 μH IDC up to 60 A | SMD 2525 7.3x7.3x3.0mm | ||
| IHLP4040DZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; | Profile height ≤ 4mm 0.19 μH to 10 μH IDC up to 90 A | SMD 4040 11.5x11.5x4.0mm | ||
| IHLP4040DZ-11 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; | Profile height ≤ 4mm 0.19 μH to 100 μH IDC up to 46 A | SMD 4040 11.5x11.5x4.0mm | ||
| IHLP5050CE-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; | Profile height ≤ 3.5mm 0.1 μH to 10 μH IDC up to 84 A | SMD 5050 13.5x13.5x3.5mm |
Resistors
| Product Name | Status | Description | Features | Package | Q-Level |
| WSL2010-18 | 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; | High power & reliability R=0.001Ω to 0.5Ω TCR <= ± 75ppm | SMD 2010 5.08x2.54x0.635 | ||
| WSL2512-18 | 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; | High power & reliability R=0.0005Ω to 0.04Ω TCR <= ± 75ppm | SMD 2512 6.36x3.18x0.635 | ||
| WSLP1206 | 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; | High power & reliability R=0.001Ω to 0.05Ω P70 = 1W | SMD 1206 3.2x1.6x0.635mm |
Schottky Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| MSS1P4 | Schottky Barrier Rectifiers SMD; ℮SMP™ Series; | VRRM = 40 V; IF = 1 A; VF = 0.41 V; | SMD MicroSMP 2.7x1.4x0.75mm | ||
| SS1P4 | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; | Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, | SMD DO-220AA (SMP) 4x2.18x1.15mm | ||
| SS2P4 | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; | Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, | SMD DO-220AA (SMP) 4x2.18x1.15mm | ||
| SS3P4 | Schottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series; | Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, | SMD DO-220AA (SMP) 4x2.18x1.15mm |
Small-Signal MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| 2N7002K | N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch | VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V | SMD TO-236 (SOT-23) |
Switch Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| 1N4148WS-V | Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; | VRRM = 75 V; IF = 0.15A; VF = 1.2 V; | SMD SOD323 2.85x1.5x1.15mm |
