Power Management - System-,DDR-,Chipset-,VGA-Power

Dual MOSFETs

Product Name Status Description Features Package Q-Level
SiZ998BDT-T1-GE3

Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
VDS = 30V; VGS = +20V / -16V
SkyFET® low side MOSFET with integrated Schottky
Low rDS(on)
rDS(on)=0.00439 / 0.0024 ohm
Qg=12 / 31.1nC; VGSth=1.2V/1.1V
SMD
PowerPAK SO-8
SiZ998BDT-T1-GE3

Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
VDS = 30V; VGS = +20V / -16V
SkyFET® low side MOSFET with integrated Schottky
Low rDS(on)
rDS(on)=0.0049 / 0.00106 ohm
Qg=12 / 52.2nC; VGSth=1.2V/1.1V
SMD
PowerPAK SO-8

SiZF906DT-T1-GE3

Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
VDS = 30V; VGS = +20V / -16V
SkyFET® low side MOSFET with integrated Schottky
Low rDS(on)
rDS(on)=0.0038 / 0.00117 ohm
Qg=24.5 / 100nC; VGSth=1.1V/1.1V
SMD
PowerPAK SO-8
SiZF916DT-T1-GE3

Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
VDS = 30V; VGS = +20V / -12V
SkyFET® low side MOSFET with integrated Schottky
Low rDS(on)
rDS(on)=0.004 / 0.00125 ohm
Qg=14.6 / 62nC; VGSth=1.1V/1.1V
SMD
PowerPAK SO-8
SiZF918DT-T1-GE3

Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
VDS = 30V; VGS = +20V / -12V
SkyFET® low side MOSFET with integrated Schottky
Low rDS(on)
rDS(on)=0.004 / 0.0019 ohm
Qg=14.6 / 37nC; VGSth=1.1V/1.1V
SMD
PowerPAK SO-8

H/L MOSFETs

Product Name Status Description Features Package Q-Level
SiRA10BDP-T1-GE3

NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID= 60A; rDS(on)=0.0036 ohm
Qg= 24.1nC; VGSth= 1.2 V
SMD
PowerPAK SO-8

SiRA12BDP-T1-GE3

N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID= 60A; rDS(on)=0.0043 ohm
Qg= 21nC; VGSth= 1.2 V
SMD
PowerPAK SO-8
SiRA14BDP-T1-GE3

N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID= 64A; rDS(on)=0.00538 ohm
Qg= 14nC; VGSth= 1.1 V
SMD
PowerPAK SO-8
SiRA18BDP-T1-GE3

N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID= 40A; rDS(on)=0.00683 ohm
Qg= 12.2nC; VGSth= 1.2V
SMD
PowerPAK SO-8
SiSHA12ADN-T1-GE

N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID= 25A; rDS(on)=0.0043 ohm
Qg=29.5nC; VGSth= 1.1V
SMD
PowerPAK 1212-8SH
SISHA14DN-T1-GE3

N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = +16V / -12V
TrenchFET® Gen IV power MOSFET
Low rDS(on)
ID=-20A; rDS(on)=0.0051 ohm
Qg= 19.4nC; VGSth= 1.1V
SMD
PowerPAK 1212-8SH

Inductors

Product Name Status Description Features Package Q-Level
IHLP1616BZ-01 NEW Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Ultra Miniature Power
Profile height ≤ 2 mm;
0.47 μH to 4.7 μH;
IDC up to 12.8 A;
SMD
1616
4.8x4.8x2.0mm

IHLP2525CZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Miniature Power
Profile height ≤ 3 mm
0.1 μH to 10 μH
IDC up to 60 A
SMD
2525
7.3x7.3x3.0mm

IHLP4040DZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 10 μH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm

IHLP4040DZ-11 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 100 μH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm

IHLP5050CE-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 μH to 10 μH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm


Resistors

Product Name Status Description Features Package Q-Level
WSL2010-18 1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635

WSL2512-18 2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635

WSLP1206 NEW 1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm


Schottky Diodes

Product Name Status Description Features Package Q-Level
MSS1P4 Schottky Barrier Rectifiers
SMD; ℮SMP™ Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm

SS1P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS2P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS3P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm


Small-Signal MOSFET

Product Name Status Description Features Package Q-Level
2N7002K N-Ch 60-V (D-S)MOSFET; 2KV ESD protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
SMD
TO-236 (SOT-23)


Switch Diodes

Product Name Status Description Features Package Q-Level
1N4148WS-V Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm