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日本語 Secondary Side - Switching Circuit
Capacitor
| Product Name | Status | Description | Features | Package | Q-Level |
| MKT 303 | C6, C7: Leaded film capacitor | Cap.range: 10nF - 10μF, E12-series; 630 VDC; low profile partly lacquered |
TH / Radial |
HEXFET Power MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| IRFB11N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.52 Ohm; ID = 11 A; |
TH / Radial TO-220AB |
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| IRFB13N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.45 Ohm; ID = 14 A; |
TH / Radial TO-220AB |
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| IRFB16N50K | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.285 Ohm; ID = 17 A; |
TH / Radial TO-220AB |
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| IRFR420APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 3 Ohm; ID = 3.3 A; |
SMD TO-252AA D-Pak |
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| IRFR430APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.7 Ohm; ID = 5 A; |
SMD TO-252AA D-Pak |
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| IRFU420APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 3 Ohm; ID = 3.3 A; |
TH / Radial TO-251AA I-Pak |
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| IRFU430APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.7 Ohm; ID = 5 A; |
TH / Radial TO-251AA I-Pak |
NPN Transistor
| Product Name | Status | Description | Features | Package | Q-Level |
|
BUD842
|
NPN high-voltage switching transistor; simple switch off transistor (SWOT); optimized RBSOA;very low dynamic satura. |
VCEOsus = 400 V; VBE = 1050 V; Ic = 4 A |
SMD TO-252 DPAK |
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BUF644
|
NPN high-voltage switching transistor | 100-kHz switching rate, very low switching losses |
TH / Radial TO-220 |
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BUF654
|
NPN high-voltage switching transistor | 100-kHz switching rate, very low switching losses |
TH / Radial TO-220 |
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BUF742-S-069
|
NPN high-voltage switching transistor | 100-kHz switching rate, | TH / Radial TO-220 |
Resistor
| Product Name | Status | Description | Features | Package | Q-Level |
| CRCW - .e3 | R1: thick film chip resistor, SMD | 1 Ω to 10 MΩ; E24-, E96-series; excellent stability |
SMD 0201 to 2512 |
