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日本語 Main Board - Distributed Power
Current Sense
| Product Name | Status | Description | Features | Package | Q-Level |
| WSL2010 | Power Metal Strip, for current sensing; low resistance values; tight tolerances; low TCR; |
R001 - R5; 1 %; TCR <= ± 75ppm P70 = 0.5W |
SMD 2010 |
Filtering
| Product Name | Status | Description | Features | Package | Q-Level |
| 293D | Solid Tantalum Chip Capacitors; TANTAMOUNT® |
0.10µF - 680µF, 4 - 50V, CECC standard types |
SMD A-P Case |
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| 594D | Solid Tantalum Chip Capacitors; TANTAMOUNT® Low ESR; |
1µF-1500µF, 4-50V, Low ESR; |
SMD B-R Case |
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| CRCW0402 | Rectangular Chip Resistors; Thick-Film Technology; Lead (Pb)-free; |
1Ohm-10MOhm, +/-1% | SMD 0402 |
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| MCU 0805 | Professional Flat Chip Resistors | R=10Ohm-1,5MOhm, P=0,125-0,2W |
SMD 0805 |
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| MMB0207 | Professional MELF Resistors | R=0,1Ohm-15MOhm, P=0,4-1,0W |
SMD / Melf 0207 |
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| TNPW0603 | Thin Film Flat Chip Resistors; High-Stability |
R=10Ohm-332kOhm, P=0,1W | SMD 0603 |
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| WKP330 | Ceramic AC Capacitors | Class X1,760VAC; Class Y1,500VAC |
TH / axial Axial |
General-Purpose Diode
| Product Name | Status | Description | Features | Package | Q-Level |
| LL4148 | SMD Small-Signal Fast-Switching Diodes | IF=300mA, VR=75V, VF=1,0V, ad IF=50mA |
SMD SOD80 |
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| LL4448 | SMD Small-Signal Fast-Switching Diodes | IF=300mA, VR=75V, VF=1,0V, ad IF=100mA |
SMD SOD80 |
Inductor
| Product Name | Status | Description | Features | Package | Q-Level |
| IDCP2218 | High-Current, Surface-Mount Inductor | 10-220µH, IDC=0,35-1,44A | SMD 2218 |
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| IHLP2525CZ | High-Current, Surface-Mount Inductor | 0,1-10µH, IDC=7-60A, shielded |
SMD 6,5×6,5×3,0mm |
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| IHLP5050CE | Low-Profile, High-Current Inductor | 0,1-10µH, IDC=14-84A, shielded |
SMD 13×13×3,5mm |
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| IMC-0805-01 |
SMD Inductor; High-Frequency; Molded; | 10-1000nH, IDC=120-540mA |
SMD 0805 |
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| IMC-1210 | SMD Inductor; Molded; | 10nH-220µH, IDC=50-734mA |
SMD 1210 |
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| IMC1812 | SMD Inductor; Molded; | 10nH-1000µH, IDC=30-450mA |
SMD 1812 |
Power MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| Si2304DDS | NEW | N-Channel 30-V (D-S) MOSFET | RDSon=60mOhm ID=3.6 VGS=10V |
SMD SOT-23 (TO-236) |
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| Si3440DV | NEW | N-Channel 150-V (D-S) MOSFET | RDSon=375mOhm@ ID=1.5A, VGS=10V |
SMD TSOP-6 |
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| Si4482DY | N-Channel 100-V (D-S) MOSFET | RDSon=60mOhm@ ID=4.6A, VGS=10V |
SMD SO-8 |
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| Si4486EY | N-Channel 100-V (D-S) MOSFET | RDSon=25mOhm@ ID=7.9A, VGS=10V |
SMD SO-8 |
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| Si4848DY | N-Channel 150-V (D-S) MOSFET | RDSon=85mOhm@ ID=3.7A, VGS=10V |
SMD SO-8 |
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| Si4896DY | N-Channel 80-V (D-S) MOSFET | RDSon=16.5mOhm@ ID=9.5A, VGS=10V |
SMD SO-8 |
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| Si9926BDY | NEW | Dual N-Channel 2.5-V (G-S) MOSFET | RDSon=20mOhm@ ID=8.2A, VGS=4.5V |
SMD SO-8 |
Protection
| Product Name | Status | Description | Features | Package | Q-Level |
| SMCJ22A | TRANSZORB® Transient Voltage Suppressors SMD; |
VW=5,0-188V, PPPM=1500W | SMD DO-214AB (SMC) |
Rectifier
| Product Name | Status | Description | Features | Package | Q-Level |
| ES1D | Ultrafast Plastic Rectifier; SMD | IF=1,0A, VR=50-200V, trr=15ns, low VF |
SMD DO-214AC (SMA) |
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| MURD620CT | Ultrafast Rectifier | IF=6A, VR=200V, trr=25ns, low Leakage |
SMD D-PAK |
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| RMB2S | Surface-Mount Bridge Rectifier | IF=0,5A, VR=200-400V, trr=150ns; |
SMD TO-269AA (MBS) |
Schottky Rectifier
| Product Name | Status | Description | Features | Package | Q-Level |
| SS33 | Surface-Mount Schottky Barrier Rectifier | IF=3A, VR=20-60V, VF=0,5-0,75V |
SMD DO-214AB (SMC) |
Zener Diode
| Product Name | Status | Description | Features | Package | Q-Level |
| MMBZ4689-V | SMD Small-Signal Zener Diodes | VZ=3,4-43V, Ptot=350mW | SMD SOT23 |
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| TZMC5V1 | Small-Signal Zener Diodes | VZ=2,4-75V, PPPtot=500mW | SMD SOD-80 |
