Power Supply - Reverse Polarity Protection
MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| SQ2309ES | P-Channel; MOSFET for general applications; IC Protection | N-Channel; 60V; rDS(on) = 0.335Ω@-10V | SMD TO-236(SOT-23) | AEC-Q | |
| SQ7415EN | Fully AEC Q-101 qualified; low thermal resistance, fast switching; | P-Channel; rDS(on) = 0.065Ohms; | SMD PowerPAK1212-8 | AEC Q101 | |
| SUD19P06-60L | P-Channel, Tj = 175 °C power MOSFET; low leakage current; | P-Channel; rDS(on) = 0.060Ohms; | SMD TO-252 |
Schottky Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| SS3P6L | Low profile, low VF; high current density; | VF = 0.478 V | SMD TO-277A(SMPC) | ||
| SS5P5 | Low profile, low VF; high current density; | VF = 0.560 V | SMD TO-277A(SMPC) |
TVS Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| SM5 A27 | High surge, low VF, low leakage; high reliability; broad range of breakdown voltages | VBR = 27V; IFSM = 500A; | SMD DO-218 AB | ||
| SM8 A27 | High surge, low VF, low leakage; high reliability; broad range of breakdown voltages | VBR = 27V; IFSM = 700A; | SMD DO-218 AB | ||
| SM8S24 A | High surge, low VF, low leakage; high reliability; broad range of breakdown voltages | Ippm = 38.9A; IFSM = 700A | SMD DO-218 AB |
