Power Management - Charger Power

Adaptor / Battery Switch

Product NameStatusDescriptionFeaturesPackageQ-Level
SiRA10BDP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 60A; rDS(on)=0.0036 ohm Qg= 24.1nC; VGSth= 1.2 VPowerPAK SO-8
SiRA60DP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID=100A; rDS(on)=0.00094 ohm Qg= 83nC; VGSth= 1.1 VPowerPAK SO-8
SiRA62DP-T1-RE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V Excellent FOM (RDS X Qg)Low rDS(on) ID=80A; rDS(on)=0.0012 ohm Qg= 61.5nC; VGSth= 1 VPowerPAK SO-8
SiSH101DN-T1-GE3 P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V TrenchFET® power MOSFETLow rDS(on) ID= -35A; rDS(on)=0.0072 ohm Qg= 68nC; VGSth= -1.2VPowerPAK 1212-8SH
SiSH617DN-T1-GE3 P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V TrenchFET® power MOSFETLow rDS(on) ID= -35A; rDS(on)=0.0123 ohm Qg= 39nC; VGSth= -1.2VPowerPAK 1212-8SH
SiSS67DN-T1-GE3 P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V TrenchFET® Gen III p-channel power MOSFETLow rDS(on) ID= -60A; rDS(on)=0.0055 ohm Qg= 74nC; VGSth= -1VPowerPAK 1212-8S
SiRA06DP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 40A; rDS(on)=0.0025 ohm Qg= 51nC; VGSth= 1.1VPowerPAK SO-8
Si7153DN-T1-GE3 P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V TrenchFET® Gen. III P-Channel power MOSFETLow rDS(on) ID= -18A; rDS(on)=0.0095 ohm Qg= 62nC; VGSth= -1VPowerPAK 1212-8

Battery Power Dual MOSFET

Product NameStatusDescriptionFeaturesPackageQ-Level
SiZ980BDT-T1-GE3 Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -16V SkyFET® low side MOSFET with integrated SchottkyLow rDS(on) rDS(on)=0.0049 / 0.00106 ohm Qg=12 / 52.2nC; VGSth=1.2V/1.1VSMD PowerPAK SO-8
SiZ998BDT-T1-GE3 Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -16V SkyFET® low side MOSFET with integrated SchottkyLow rDS(on) rDS(on)=0.00439 / 0.0024 ohm Qg=12 / 31.1nC; VGSth=1.2V/1.1VPowerPAK SO-8
SiZF906DT-T1-GE3 Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -16V SkyFET® low side MOSFET with integrated SchottkyLow rDS(on) rDS(on)=0.0038 / 0.00117 ohm Qg=24.5 / 100nC; VGSth=1.1V/1.1VPowerPAK SO-8
SiZF916DT-T1-GE3 Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -12V SkyFET® low side MOSFET with integrated SchottkyLow rDS(on) rDS(on)=0.004 / 0.00125 ohm Qg=14.6 / 62nC; VGSth=1.1V/1.1VPowerPAK SO-8
SiZF918DT-T1-GE3 Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY VDS = 30V; VGS = +20V / -12V SkyFET® low side MOSFET with integrated SchottkyLow rDS(on) rDS(on)=0.004 / 0.0019 ohm Qg=14.6 / 37nC; VGSth=1.1V/1.1VPowerPAK SO-8

Battery Power MOSFET

Product NameStatusDescriptionFeaturesPackageQ-Level
SiRA12BDP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 60A; rDS(on)=0.0043 ohm Qg= 21nC; VGSth= 1.2 VPowerPAK SO-8
SiRA14BDP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 64A; rDS(on)=0.00538 ohm Qg= 14nC; VGSth= 1.1 VPowerPAK SO-8
SiRA18BDP-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 40A; rDS(on)=0.00683 ohm Qg= 12.2nC; VGSth= 1.2VPowerPAK SO-8
SiSHA12ADN-T1-GE N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID= 25A; rDS(on)=0.0043 ohm Qg=29.5nC; VGSth= 1.1VPowerPAK 1212-8SH
SISHA14DN-T1-GE3 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = +16V / -12V TrenchFET® Gen IV power MOSFETLow rDS(on) ID=-20A; rDS(on)=0.0051 ohm Qg= 19.4nC; VGSth= 1.1VPowerPAK 1212-8SH

Inductors

Product NameStatusDescriptionFeaturesPackageQ-Level
IHLP2525CZ-01Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Miniature PowerProfile height ≤ 3 mm 0.1 μH to 10 μH IDC up to 60 ASMD 2525 7.3x7.3x3.0mm
IHLP4040DZ-01Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded;Profile height ≤ 4mm 0.19 μH to 10 μH IDC up to 90 ASMD 4040 11.5x11.5x4.0mm
IHLP4040DZ-11Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded;Profile height ≤ 4mm 0.19 μH to 100 μH IDC up to 46 ASMD 4040 11.5x11.5x4.0mm
IHLP5050CE-01Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded;Profile height ≤ 3.5mm 0.1 μH to 10 μH IDC up to 84 ASMD 5050 13.5x13.5x3.5mm

Resistors

Product NameStatusDescriptionFeaturesPackageQ-Level
WSL2010-181 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value;High power & reliability R=0.001Ω to 0.5Ω TCR <= ± 75ppmSMD 2010 5.08x2.54x0.635
WSL2512-182 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value;High power & reliability R=0.0005Ω to 0.04Ω TCR <= ± 75ppmSMD 2512 6.36x3.18x0.635
WSLP12061 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing;High power & reliability R=0.001Ω to 0.05Ω P70 = 1WSMD 1206 3.2x1.6x0.635mm

Schottky Diodes

Product NameStatusDescriptionFeaturesPackageQ-Level
MSS1P4Schottky Barrier Rectifiers SMD; ℮SMP™ Series;VRRM = 40 V; IF = 1 A; VF = 0.41 V;SMD MicroSMP 2.7x1.4x0.75mm
SS10P4Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series;High power /small package VRRM = 40 V; IF = 10 A;VF = 0.384 VSMD TO-277A (SMPC) 6.65x4.75x1.2mm
SS1P4Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series;Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V,SMD DO-220AA (SMP) 4x2.18x1.15mm
SS2P4Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series;Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V,SMD DO-220AA (SMP) 4x2.18x1.15mm
SS3P4Schottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series;Small package VRRM = 40 V; IF = 3A, VF = 0.5 V,SMD DO-220AA (SMP) 4x2.18x1.15mm
SS5P4Schottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series;High power /small package VRRM = 40 V; IF = 5 A, VF = 0.403 V,SMD TO-277A (SMPC) 6.65x4.75x1.2mm
SS8P4CSchottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series; Dual Common-Cathode;High power /small package VRRM = 40 V; IF = 8 A, VF = 0.42 V,SMD TO-277A (SMPC) 6.65x4.75x1.2mm
SSC54Schottky Barrier Rectifiers; SMD; High Current Density;Small Outline VRRM = 40 V; IF = 5 A, VF = 0.36V,SMD DO-220AA (SMC) 8.13x6.22x2.62mm

Signal Mosfet

Product NameStatusDescriptionFeaturesPackageQ-Level
2N7002KN-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast SwitchVDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 VSMD TO-236 (SOT-23)

Switch Diodes

Product NameStatusDescriptionFeaturesPackageQ-Level
1N4148WS-VSmall Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant;VRRM = 75 V; IF = 0.15A; VF = 1.2 V;SMD SOD323 2.85x1.5x1.15mm