Main Board - Distributed Power
Current Sense
Product Name | Status | Description | Features | Package | Q-Level |
WSL2010 | Power Metal Strip, for current sensing; low resistance values; tight tolerances; low TCR; | R001 - R5; 1 %; TCR <= ± 75ppm P70 = 0.5W | SMD 2010 |
Filtering
Product Name | Status | Description | Features | Package | Q-Level |
293D | Solid Tantalum Chip Capacitors; TANTAMOUNT® | 0.10µF - 680µF, 4 - 50V, CECC standard types | SMD A-P Case | ||
594D | Solid Tantalum Chip Capacitors; TANTAMOUNT® Low ESR; | 1µF-1500µF, 4-50V, Low ESR; | SMD B-R Case | ||
CRCW0402 | Rectangular Chip Resistors; Thick-Film Technology; Lead (Pb)-free; | 1Ohm-10MOhm, +/-1% | SMD 0402 | ||
MCU 0805 | Professional Flat Chip Resistors | R=10Ohm-1,5MOhm, P=0,125-0,2W | SMD 0805 | ||
MMB0207 | Professional MELF Resistors | R=0,1Ohm-15MOhm, P=0,4-1,0W | SMD / Melf 0207 | ||
TNPW0603 | Thin Film Flat Chip Resistors; High-Stability | R=10Ohm-332kOhm, P=0,1W | SMD 0603 | ||
WKP330 | Ceramic AC Capacitors | Class X1,760VAC; Class Y1,500VAC | TH / axial Axial |
General-Purpose Diode
Product Name | Status | Description | Features | Package | Q-Level |
LL4148 | SMD Small-Signal Fast-Switching Diodes | IF=300mA, VR=75V, VF=1,0V, ad IF=50mA | SMD SOD80 | ||
LL4448 | SMD Small-Signal Fast-Switching Diodes | IF=300mA, VR=75V, VF=1,0V, ad IF=100mA | SMD SOD80 |
Inductor
Product Name | Status | Description | Features | Package | Q-Level |
IDCP2218 | High-Current, Surface-Mount Inductor | 10-220µH, IDC=0,35-1,44A | SMD 2218 | ||
IHLP2525CZ | High-Current, Surface-Mount Inductor | 0,1-10µH, IDC=7-60A, shielded | SMD 6,5×6,5×3,0mm | ||
IHLP5050CE | Low-Profile, High-Current Inductor | 0,1-10µH, IDC=14-84A, shielded | SMD 13×13×3,5mm | ||
IMC-0805-01 | SMD Inductor; High-Frequency; Molded; | 10-1000nH, IDC=120-540mA | SMD 0805 | ||
IMC-1210 | SMD Inductor; Molded; | 10nH-220µH, IDC=50-734mA | SMD 1210 | ||
IMC1812 | SMD Inductor; Molded; | 10nH-1000µH, IDC=30-450mA | SMD 1812 |
Power MOSFET
Product Name | Status | Description | Features | Package | Q-Level |
Si2304DDS | N-Channel 30-V (D-S) MOSFET | RDSon=60mOhm ID=3.6 VGS=10V | SMD SOT-23 (TO-236) | ||
Si3440DV | N-Channel 150-V (D-S) MOSFET | RDSon=375mOhm@ ID=1.5A, VGS=10V | SMD TSOP-6 | ||
Si4482DY | N-Channel 100-V (D-S) MOSFET | RDSon=60mOhm@ ID=4.6A, VGS=10V | SMD SO-8 | ||
Si4486EY | N-Channel 100-V (D-S) MOSFET | RDSon=25mOhm@ ID=7.9A, VGS=10V | SMD SO-8 | ||
Si4848DY | N-Channel 150-V (D-S) MOSFET | RDSon=85mOhm@ ID=3.7A, VGS=10V | SMD SO-8 | ||
Si4896DY | N-Channel 80-V (D-S) MOSFET | RDSon=16.5mOhm@ ID=9.5A, VGS=10V | SMD SO-8 | ||
Si9926BDY | Dual N-Channel 2.5-V (G-S) MOSFET | RDSon=20mOhm@ ID=8.2A, VGS=4.5V | SMD SO-8 |
Protection
Product Name | Status | Description | Features | Package | Q-Level |
SMCJ22A | TRANSZORB® Transient Voltage Suppressors SMD; | VW=5,0-188V, PPPM=1500W | SMD DO-214AB (SMC) |
Rectifier
Product Name | Status | Description | Features | Package | Q-Level |
ES1D | Ultrafast Plastic Rectifier; SMD | IF=1,0A, VR=50-200V, trr=15ns, low VF | SMD DO-214AC (SMA) | ||
MURD620CT | Ultrafast Rectifier | IF=6A, VR=200V, trr=25ns, low Leakage | SMD D-PAK | ||
RMB2S | Surface-Mount Bridge Rectifier | IF=0,5A, VR=200-400V, trr=150ns; | SMD TO-269AA (MBS) |
Schottky Rectifier
Product Name | Status | Description | Features | Package | Q-Level |
SS33 | Surface-Mount Schottky Barrier Rectifier | IF=3A, VR=20-60V, VF=0,5-0,75V | SMD DO-214AB (SMC) |
Zener Diode
Product Name | Status | Description | Features | Package | Q-Level |
MMBZ4689-V | SMD Small-Signal Zener Diodes | VZ=3,4-43V, Ptot=350mW | SMD SOT23 | ||
TZMC5V1 | Small-Signal Zener Diodes | VZ=2,4-75V, PPPtot=500mW | SMD SOD-80 |