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| 293D | | Solid Tantalum Chip Capacitors;
TANTAMOUNT® | 0.10µF - 680µF, 4 - 50V,
CECC standard types | SMD
A-P Case | |
| 593D | | Solid Tantalum Chip Capacitors;
TANTAMOUNT® | 0.47µF-680µF, 4-50V,
Low ESR, 100% surged | SMD
A-E Case | |
| B2S | | Surface-Mount Bridge Rectifier | IF=0,5A, VR=200-600V | SMD
TO-269AA (MBS) | |
| BAW56 | | SMD Small-Signal Schottky Diode;
Dual | IF=250mA, VR=70V | SMD
SOT23 | |
| BZX84-V | | SMD Small-Signal Zener Diodes | P=300mW , VZ= 2,4-75V | SMD
SOT23 | |
| DG9409 | | Low-Voltage Analog Multiplexers
Precision 8-Ch/Dual 4-Ch | 2,7-12V, single supply
or 3 to 6V dual supply | SMD
QFN 16 (4x4 mm) | |
| DG9415DQ | | Single 4 × 1 and Dual 2 × 1 Multiplexers | 2,7-12V, rSD= 14Ohm | SMD
MSOP-10 | |
| IHLP2525BD | | Low-Profile, High-Current Inductor | 0,1-10µH, IDC=7-50A,
shielded | SMD
6,5×6,5×2,4mm | |
| IHLP5050CE | | Low-Profile, High-Current Inductor | 0,1-10µH, IDC=14-84A,
shielded | SMD
13×13×3,5mm | |
| IHLP5050FD | | Low-Profile, High-Current Inductor | 0,1-10µH, IDC=15,5-120A,
shielded | SMD
13×13×6,5mm | |
| ILB1206 | | Multilayer Ferrite Beads | 19-2000Ohm,
IDC=100-500mA,
self-shielded | SMD
1206 | |
| ILD2 | | Optocoupler, Phototransistor Output;
Dual- and Quad-Channel | Isolation Voltage
5300Vrms | SMD
DIP-8/16,
SMD-8/16 | |
| ISC-1812 | | SMD Inductor; Shielded; Molded; | 0,1µH-1,0mH,
IDC=66-552mA | SMD
SMD | |
| LH1525 | | 1 Form A Solid-State Relays | Isolation Voltage
5300Vrms, high-speed | SMD
DIP-6 / SMD-6 | |
| MKT1813 | | Metallized Polyester Film Capacitor | C=470pF - 22µF,
VR=63-1000VDC,
VR=40-220VAC | TH / axial
Axial leaded | |
| SFH601 | | Optocoupler, Phototransistor Output,
With Base Connection; | Isolation Voltage
5300Vrms | SMD
DIP-6 / SMD-6 | |
| SFH615 | | Optocoupler, Phototransistor Output,
High-Reliability, | Isolation Voltage
5300Vrms | SMD
DIP-4 / SMD-4 | |
| Si4840DY | | N-Channel 40-V (D-S) MOSFET | RDSon=9mOhm@ ID=14A,
VGS=10V | SMD
SO-8 | |
| Si4848DY | | N-Channel 150-V (D-S) MOSFET | RDSon=85mOhm@ ID=3.7A,
VGS=10V | SMD
SO-8 | |
| Si4866BDY | | N-Channel MOSFET, 1.8 V(G-S) , 12 V(D-S) | RDSon=7.4mOhm@ ID=18.2A,
VGS=1.8V | SMD
SO-8 | |
| Si7110DN | | N-Channel 20-V (D-S)
Fast-Switching MOSFET | RDSon=5.3mOhm@ ID=21.1A,
VGS=10V | SMD
PowerPAK 1212-8 | |
| Si7904BDN | | DUAL N-Channel MOSFET,
1.8V(G-S) , 20V(D-S) | RDSon=45mOhm@ ID=6A,
VGS=1.8V | SMD
PowerPAK 1212-8 | |
| SUD50N02-06P | | N-Channel MOSFET, 20 V(D-S) , 175°C | RDSon=6mOhm@ ID=26A,
VGS=10V | SMD
TO-252 | |
| TP0101K | | P-Channel 20-V (D-S) MOSFET,
Low-Threshold | RDSon=650mOhm@ ID=-0,58A,
VGS=-4,5V | SMD
SOT-23 (TO-236) | |
| WSL2512 | | Power Metal Strip, for current sensing;
low resistance values;
tight tolerances; low TCR; | R0005 - R5; 1 %;
TCR <= ± 75ppm
P70 = 1W | SMD
2512 | |
