Power Supply - CPU/DSP Power Supply
Dual MOSFETs
Product Name | Status | Description | Features | Package | Q-Level |
Si4214DDY | Dual N-Channel 30-V (D-S) MOSFET | rDS(on) = 0.0195 Ohm; Qgd=7.1nC | SMD SO-8 | ||
Si4830CDY | Dual N-Channel; 30-V (D-S) Mosfet plus Schottky Diode | rDS(on) = 0.020 Ohm; Qgd=7.3nC | SMD SO-8 | ||
Si4834BDY | Dual N-Ch. mosfet plus Schottky diode; | N-Channel; 30-V (D-S); rDS(on) = 0.022 Ohm; Qgd=2.5nC | SMD SO-8 | ||
Si4914DY | Dual N-Ch. MOSFET plus Schottky diode, | N-Channel; 30-V (D-S); rDS(on) = 0.022 Ohm; Qgd=2.3nC | SMD SO-8 | ||
Si7270DP | Dual N-Channel; 30-V (D-S) MOSFET | TrenchFET rDS(on) = 0.021 Ohm; Qgd= 6.6 | SMD PPAK SO-8 |
High Sid MOSFETs
Product Name | Status | Description | Features | Package | Q-Level |
Si4178DY | N-Channel 30-V (D-S) Mosfet | TrenchFET RDS(on)= 0.021 Ohm Qgd= 3.7nC | SO-8 |
High Side MOSFETs
Product Name | Status | Description | Features | Package | Q-Level |
Si4134DY | N-Channel; 30-V (D-S) Mosfet | rDS(on) = 0.014 Ohm; Qgd=7.3nC | SMD SO-8 | ||
Si4162DY | N-Channel 30V-( D-S) MOSFET | N-Channel; 30-V (D-S); rDS(on) = 0.0079 Ohm; Qg=8.8 nC | SMD SO-8 | ||
Si4174DY | N-Channel 30-V (D-S) Mosfet Extr.Low Switching Loss | TrenchFET rDS(on) = 0.0095 Ohm; Qgd= 8nC | SMD SO-8 | ||
Si4178DY | N-Channel 30-V (D-S) Mosfet | rDS(on) = 0.021 Ohm; Qgd=3.7nC | SMD SO-8 | ||
Si4684DY | N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss | N-Channel; 30-V (D-S); rDS(on) = 0.0094 Ohm; Qgd=2.8nC | SMD SO-8 | ||
Si4686DY | N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss | N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Qgd=2.8nC | SMD SO-8 | ||
Si4812BDY | N-Ch. Reduced Qg, Fast Switching MOSFET | N-Channel; 30-V (D-S); rDS(on) = 0.021 Ohm; Qgd=2.1nC | SMD SO-8 | ||
Si7230DN | N-Ch. Reduced Qg, Fast Switching MOSFET smaller package; | N-Channel; 30-V (D-S); rDS(on) = 0.016 Ohm; Qgd=4.3nC | SMD PowerPAK 1212 | ||
SiR172DP | N-Channel 30-V (D-S);MOSFET; | TrenchFET rDS(on) = 0.0089 Ohm; Qgd=9.8nC | SMD PPAK SO-8 | ||
SiR462DP | N-Channel; 30-V (D-S) MOSFET | rDS(on) = 0.0079 Ohm; Qg=8.8nC | SMD PPAK SO-8 | ||
SiS402DN | N-Channel; 30-V (D-S) MOSFET | rDS(on) = 0.006 Ohm; Qgd=12nC | SMD PPAK 1212-8 | ||
SiS412DN | N-Channel; 30-V (D-S) MOSFET; | rDS(on) = 0.024 Ohm; Qgd=3.8nC | SMD PPAK 1212-8 |
Low Side MOSFETs
Product Name | Status | Description | Features | Package | Q-Level |
Si4156DY | N-Channel 30-V (D-S) MOSFET | rDS(on) = 0.006 Ohm; | SMD SO-8 | ||
Si4160DY | N-Channel 30-V (D-S) MOSFET | N-Channel; 30-V (D-S); rDS(on) = 0.0049 Ohm; | SMD SO-8 | ||
Si4162DY | N-Channel 30-V (D-S)MOSFET | TrenchFET rDS(on) = 0.0079 Ohm; Qg=18nC | SMD SO-8 | ||
Si4164DY | N-Channel 30V(D-S) MOSFET | TrenchFET rDS(on) = 0.0032 ohm Qgd= 26.5nC | SMD SO-8 | ||
Si4174DY | N-Channel 30-V (D-S) Mosfet | N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Qgd=8 nC | SMD SO-8 | ||
Si4178DY | N-Channel 30-V (D-S) Mosfet | N-Channel; 30V-(D-S) rDS(on)=0.021 ohm ID= 12a | SO-8 | ||
Si4634DY | N-Channel MOSFET; Reduced Rds; Extr.Low Switching Loss | N-Channel; 30-V (D-S); rDS(on) = 0.0067 Ohm; | SMD SO-8 | ||
Si4686DY | N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss | N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Qgd=2.8nC | SMD SO-8 | ||
Si4800BDY | N-Channel MOSFET; Reduced Rds; | N-CH,30V,Rds on=0.03Ohm, | SO-8 | ||
Si4812BDY | N-Channel Reduced Rds | N-Channel; 30-V (D-S); rDS(on) = 0.016 Ohm; | SMD SO-8 | ||
Si7114ADN | N-Channel 30-V (D-S) Mosfet | rDS(on) = 0.0075 Ohm; Qgd=12nC | SMD PPAK 1212-8 | ||
Si7634BDP | N-Channel MOSFET;Reduced Rds | N-Channel; 30-V (D-S); rDS(on) = 0.0052 Ohm; | SMD PPAK SO-8 | ||
Si7716ADN | N-Channel 30-V (D-S) Mosfet | TrenchFET Gen III rDS(on) = 0.0135 Ohm; Qgd=7.3nC | SMD PPAK 1212-8 | ||
SiR466DP | N-Channel 30-V (D-S) MOSFET | TrenchFET rDS(on) = 0.0035 Ohm; Qgd= 21.5nC | SMD PPAK SO-8 | ||
SiR818DP | N-Channel 30-V (D-S) Mosfet | rDS(on) = 0.0028 Ohm; Qgd = 30.5nC | SMD PPAK SO-8 | ||
SiS402DN | N-Channe; 30-V (D-S) Mosfet | rDS(on) = 0.006 Ohm; Qgd=12nC | SMD PPAK 1212-8 | ||
SiS412DN | N-Channel 30-V (D-S) Mosfet Ex | rDS(on) = 0.024 Ohm; Qgd=3.8nC | SMD PPAK 1212-8 |
Resistors
Product Name | Status | Description | Features | Package | Q-Level |
WSL0805 | small resistance, high power | 1/8 W POWER; R=0.01 to 0.2 Ohm; | SMD 0805 | ||
WSL2010-18 | small resistance, high power | 2010 size, Up to 1w power | SMD 2010 | ||
WSL2512-18 | small resistance, high power | 2512 size,up to 2w POWER | SMD 2512 |
Schottky Diodes
Product Name | Status | Description | Features | Package | Q-Level |
B140 | low VF , low leakage current. | 10A; 40V; | SMD SMA | ||
B240A | low VF , low leakage current. | 20A; 40V; | SMD SMA | ||
B340A | low VF , low leakage current. | 30A,40V; | SMD SMA | ||
SS1P4 | Schottky Diodes; low leakage current; small Package; | 10,40V | SMP | ||
SS2P4 | Schottky Diodes; low VF; low leakage current; small Package; | 20A,40V | SMP | ||
SS3P4 | Schottky Diodes; low VF; low leakage current; small Package; | 30A, 40V | SMP |
Shielded Power Inductors
Product Name | Status | Description | Features | Package | Q-Level |
IHLP1616-01 | High current, low profile inductor low DCR; Shielded; | Rated current up to 11A. | SMD | ||
IHLP2525CZ-01 | High current, low profile inductors; low DCR; Shielded; | Rated current up to 25A, | SMD | ||
IHLP4040DZ-01 | High current, low profile inductors; low DCR; Shielded; | up to 100uH; IDC up to 40A; | SMD | ||
IHLP4040DZ-11 | High current, low profile inductors; low DCR; Shielded; | up to 100uH; IDC up to 40A; | SMD |
Switching Diode
Product Name | Status | Description | Features | Package | Q-Level |
1N4148WS-V | Small signal fast switching diodes; | 500mA current, Vf=1.0 V; Vrrm=75 V; | SMD SOD-323 | ||
BAT54A-V | Small Signal Schottky Diodes; Single & Dual; | rated current 200mA; VR 30v, Vf=0.32 | SMD SOT-23 | ||
BAT54W-V | Small Signal Schottky Diode; Single; | rated current 200mA; VR 30v, Vf=0.32 | SMD SOD123 | ||
BAV99-V | Small Signal Fast Switching Diodes; | rated current 50 mA; Vrrm 70 V; | SMD SOT-23 |