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eFuse PowerStage with Pre-Charge Bidirectional, 1200 V, 20 mΩ SiC MOSFET

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This eFuse PowerStage evaluation board is equipped with 1200 V, 20 mΩ total SiC MOSFETs to break bidirectional currents, as well as a pre-charge switch and resistor.

The power circuit provides all the necessary feedback signals, including current and voltage. These signals are provided via a standard connector, allowing the user to attach a custom control board. The current handling capability of this power stage depends heavily on acceptable losses and thermal management. The design intention is to provide a possible solution for automotive eFuses that protect auxiliary components and handle currents of up to 40 A.

Reference Design Files

Reference Board

Datasheet

This eFuse PowerStage evaluation board is equipped with 1200 V, 20 mΩ total SiC MOSFETs to break bidirectional currents, as well as a pre-charge switch and resistor.

The power circuit provides all the necessary feedback signals, including current and voltage. These signals are provided via a standard connector, allowing the user to attach a custom control board. The current handling capability of this power stage depends heavily on acceptable losses and thermal management. The design intention is to provide a possible solution for automotive eFuses that protect auxiliary components and handle currents of up to 40 A.

Reference Design Files

Reference Board

Datasheet

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Reference

Functional Block Diagram

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Features

Low TCR shunt for precise current measurement

Low tracking error voltage divider

Robust I/O port with ESD protection and freewheel capabilities

Robust SiC switches with a 3 µs short circuit withstand time

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