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SiC MOSFET-Based 800 V, 40 A Bidirectional eFuse

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This power board is capable of handling voltages up to 950 V and 40 A current. The circuit can be easily scaled up for high current ratings. In addition to the eFuse functionality, the circuit benefits from a pre-charge circuit connected in parallel with the main eFuse switch, which avoids inrush currents into external uncharged capacitors.

The power circuit is fully equipped with all the required feedback signals, including the circuit current - which is measured by a Vishay low TCR shunt resistor - and the circuit voltage, which is measured by a low tracking error voltage divider.

Reference Design Files

Reference Board

Datasheet

This power board is capable of handling voltages up to 950 V and 40 A current. The circuit can be easily scaled up for high current ratings. In addition to the eFuse functionality, the circuit benefits from a pre-charge circuit connected in parallel with the main eFuse switch, which avoids inrush currents into external uncharged capacitors.

The power circuit is fully equipped with all the required feedback signals, including the circuit current - which is measured by a Vishay low TCR shunt resistor - and the circuit voltage, which is measured by a low tracking error voltage divider.

Reference Design Files

Reference Board

Datasheet

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Reference

Functional Block Diagram

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Features

Low TCR shunt for precise current measurement

Low tracking error voltage divider

Robust I/O port providing ESD protection and freewheel capabilities

Fast switching speed

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