METALLIZATION OPTIONS
Vishay Electro-Films offers a variety of metal stack combinations to accommodate design requirements for different industries. Each metal deposited on the substrate serves a purpose or function. For the adhesion layer, Vishay typically uses Titanium Tungsten (TiW) or Chromium (Cr). For a Barrier layer EFI typically uses Palladium or Nickel depending on the temperature requirements.
For standard conductor patterns, Al or Au are used and for High Current conductor requirements either Gold or Copper can be used. Vishay also offers Silicon Nitride or Polyimide as Dielectric interlayers or overcoats. Metal Systems are generally chosen based upon electrical and/or thermal performance demands and assembly requirements.
For a list of EFI’s standard metal stacks with thickness capabilities, please see the SPF1 datasheet.
Metallization Options: Sputtering and Plating ADHESION LAYERS BARRIER LAYERS CONDUCTOR LAYERS HIGH CURRENT CONDUCTOR LAYERS DIELECTRIC LAYERS Titanium Tungsten (TiW) Sputtered Palladium (Pd) Sputtered
High Temp. Barrier
Aluminum (AI) Sputtered Gold (Au) Plates Silicon Nitride (Si3N4) Deposited
Dielectric Constant = 6.9
Chrome Sputtered
Nickel (Ni) Sputtered or Plated Gold (Au) Sputtered Plates Nickel Chromiun (NiCr) Sputtered
Copper (Cu) Plated Polyimide Deposited
Dielectric Constant = 3.4
Tantalum Nitride (Ta2N) Sputtered Titanium Tungsten (TiW) Sputtered
High Temp. Barrier
Copper (Cu) Sputtered Plated