This new reference design features an eFuse with 750 V and 2 mΩ total silicon carbide (SiC) JFET cascodes and a VOA300 optocoupler. It is designed to provide continuous power of up to 40 kW to the load. The design allows for continuous operation at full current with less than 30 W of losses and no active cooling. It also features a preload function, continuous current monitoring, and overcurrent protection with a shutdown time of less than 2.5 µs. Analog control is implemented in the low-voltage domain, and measurement data is transmitted across the isolation barrier using the VOA300.
Reference Design Files
- 400VDC-eFuse
ZIP | Jun 5, 2024
White Paper
- 400 Vdc, 100 A Bidirectional eFuse
PDF | Aug 11, 2022
This new reference design features an eFuse with 750 V and 2 mΩ total silicon carbide (SiC) JFET cascodes and a VOA300 optocoupler. It is designed to provide continuous power of up to 40 kW to the load. The design allows for continuous operation at full current with less than 30 W of losses and no active cooling. It also features a preload function, continuous current monitoring, and overcurrent protection with a shutdown time of less than 2.5 µs. Analog control is implemented in the low-voltage domain, and measurement data is transmitted across the isolation barrier using the VOA300.
Reference Design Files
- 400VDC-eFuse
ZIP | Jun 5, 2024
White Paper
- 400 Vdc, 100 A Bidirectional eFuse
PDF | Aug 11, 2022




