This design's power stage uses 80V Si TrenchFET® MOSFETs with a total resistance of 0.6mΩ, handling continuous currents of up to 100A in 48V systems. Due to their low on-resistance, these MOSFETs allow the design to operate continuously at maximum current with less than 14 W of losses, enabling passive cooling. The eFuse power stage is controlled by analog circuitry for precharge control, overcurrent detection, and continuous current monitoring. The eFuse latches off once an overcurrent exceeding the user-defined threshold is detected and can be re-enabled by the user.
Reference Design Files
- EFUSE-48V100A
ZIP | Oct 18, 2023
Reference Board
- EFUSE-48V100A
Sep 17, 2025
Datasheet

- EFUSE-48V100A
PDF | Oct 27, 2023
This design's power stage uses 80V Si TrenchFET® MOSFETs with a total resistance of 0.6mΩ, handling continuous currents of up to 100A in 48V systems. Due to their low on-resistance, these MOSFETs allow the design to operate continuously at maximum current with less than 14 W of losses, enabling passive cooling. The eFuse power stage is controlled by analog circuitry for precharge control, overcurrent detection, and continuous current monitoring. The eFuse latches off once an overcurrent exceeding the user-defined threshold is detected and can be re-enabled by the user.
Reference Design Files
- EFUSE-48V100A
ZIP | Oct 18, 2023
Reference Board
- EFUSE-48V100A
Sep 17, 2025
Datasheet

- EFUSE-48V100A
PDF | Oct 27, 2023


