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Analog eFuse, 80 V, 0.6 mΩ Si MOSFET

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This design's power stage uses 80 V Si TrenchFET® MOSFETs with a total resistance of 0.6 mΩ, handling continuous currents of up to 100 A in 48 V systems. Due to their low on-resistance, these MOSFETs allow the design to operate continuously at maximum current with less than 14 W of losses, enabling passive cooling. The eFuse power stage is controlled by analog circuitry for precharge control, overcurrent detection, and continuous current monitoring. The eFuse latches off once an overcurrent exceeding the user-defined threshold is detected and can be re-enabled by the user.

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This design's power stage uses 80 V Si TrenchFET® MOSFETs with a total resistance of 0.6 mΩ, handling continuous currents of up to 100 A in 48 V systems. Due to their low on-resistance, these MOSFETs allow the design to operate continuously at maximum current with less than 14 W of losses, enabling passive cooling. The eFuse power stage is controlled by analog circuitry for precharge control, overcurrent detection, and continuous current monitoring. The eFuse latches off once an overcurrent exceeding the user-defined threshold is detected and can be re-enabled by the user.

Reference Design Files

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Datasheet

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48 V 100 A eFuse

Reference Design - 48 V 100 A eFuse

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Features

Disconnect loads in under 2 μs

Precharging of DC-link capacitors in power electronics

Resettable fuse

Adjustable current limit

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