Products
» Trench IGBT Platform
Trench IGBT Platform
Trench PT and FS IGBT Platform
in 4 Die Sizes
in 4 Die Sizes
New Trench PT and FS IGBT Platform
- Offering includes one Trench PT and six Trench FS IGBTs
- Low collector-to-emitter voltages down to 1.07 V at 50 % rated current and +125 °C provide extremely low conduction losses
- Trench PT devices optimized for low switching frequencies to 1 kHz
- Trench FS IGBTs offer 6 µs short circuit rating and
high operating temperatures to
+175 °C - Feature collector current ratings from 30 A to 240 A
- Breakdown voltages of 600 V and 650 V for increased reliability
- Trench construction offers smaller size than planar devices
- Optimized for use with Vishay's new FRED Pt® Gen 4 Ultrafast soft diodes
FRED Pt® Gen 4
Reduce Conduction Losses and Increase Efficiency
FRED Pt® Gen 4 Ultrafast Diodes
- Gen 4 FRED Pt technology
- Low IRRM and reverse recovery charge
- Ultrasoft recovery in any switching conditions
- Ultra-low forward voltage down to 1.4 V
- Ultrafast reverse recovery times down to 25 ns
- Polyimide passivated chip for high reliability
- High operating temperature to +175 °C
- RoHS-compliant
For more information on Vishay Semiconductors' Trench IGBT
and FRED Pt® Gen 4, please contact
diewafer@vishay.com.