VBT6045CBP-E3 PRODUCT INFORMATION

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A
vsh-img-product-image

pdf-icon-small Datasheet

FEATURES

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

APPLICATIONS

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.


Vishay engineers can answer questions about product quality, performance, and specifications.
* = required


Error!