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1200 V SiC MOSFETs

Vishay 1200 V MaxSiC® n-channel MOSFETs deliver high-efficiency switching for power stages in industrial systems. Featuring fast switching and a 3 µs short-circuit withstand capability, these devices offer typical 45 mΩ RDS(on) at VGS = 18 V with continuous ID of 51 A to 52 A. Low gate charge and low Coss help designers achieve high power density in solar inverters, motor drives, DC/DC converters, UPS, and energy storage.

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MOSFETs - Silicon Carbide MaxSiC® MOSFETs

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Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.®

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