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Gen V TrenchFET® MOSFETs in PowerPAK® SO-8

The portfolio spans n- and p-channel devices from −60 V to 150 V, with RDS(on) down to 0.47 mΩ (10 V), VGS ratings up to 20 V, and power dissipation to ~104 W. Low gate charge and strong thermal performance support high efficiency switching in dense automotive, computing, and industrial designs.

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TrenchFET Gen V Power MOSFETs

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Gen V TrenchFET® MOSFETs in PowerPAK® SO-8

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