VS-3C06ET07S2L-M3 PRODUCT INFORMATION

650 V Gen 3 Power SiC Merged PIN Schottky Diode, 6 A
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FEATURES

Majority carrier diode using Schottky technology on SiC wide band gap material
Improved VF and efficiency by thin wafer technology
Positive VF temperature coefficient for easy paralleling


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Showing 1 to 8 of 8 entries
Document TypeTitleDescriptionShare
Application Notes
How to Use an SiC Diode in a PFC Circuit
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Datasheet
650 V Gen 3 Power SiC Merged PIN Schottky Diode, 6 A
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Markings
Marking
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Markings
D2PAK 2L
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Packaging Information
D2PAK
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Package Drawings
D2PAK 2L (TO-263AB 2L)
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Product Literature
Gen 3 Silicon Carbide Schottky Diodes
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Product Literature
Silicon Carbide (SiC) Schottky Diodes
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