SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 240 A


Virtually no recovery tail and no switching losses
Majority carrier diode using Schottky technology on SiC wide band gap material
Improved VF and efficiency by thin wafer technology


Wide band gap SiC based 1200 V Schottky diode, designed for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters


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Application Notes
Mounting Instructions for SOT-227 Modules
SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 240 A
Packaging Information
SOT-227 Generation II
Package Drawings
SOT-227 Generation 2
Product Literature
Selector Guide