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MOSFETs
 Demonstration on Vishay's E Series 600 V and 650 V High Voltage E Series MOSFETs against competing products
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 MOSFET technologies for power conversion
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 Comparison between PowerPAIR® Gen IV against two PowerPAK® Gen IV products
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 E Series superjunction technology for hard-switched topologies
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 Max RDS(on) of 4 mΩ Provides Higher Efficiency
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 On-resistance at VGS = −10 V: 0.0016 Ω (max.)
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 Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.
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MOSFETs VIDEOS
SiZ340DT MOSFETs Dual N-Channel 30 V (D-S) MOSFETs.
Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.
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