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MOSFETs

Demonstration on Vishay's E Series 600 V and 650 V High Voltage E Series MOSFETs against competing products
MOSFET technologies for power conversion
Comparison between PowerPAIRŪ Gen IV against two PowerPAKŪ Gen IV products
E Series superjunction technology for hard-switched topologies
Max RDS(on) of 4 mΩ Provides Higher Efficiency
On-resistance at VGS = −10 V: 0.0016 Ω (max.)
Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.

MOSFETs VIDEOS

SiZ340DT MOSFETs Dual N-Channel 30 V (D-S) MOSFETs.


Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.
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