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MOSFETs - P-channel

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Series 🔼	Package	Configuration	CH_ID	Channel	V_DS (V)	V_GS (V)	r_DS(on) at 10 V	r_DS(on) at 7.5 V	r_DS(on) at 6 V	r_DS(on) at 4.5 V	r_DS(on) at 2.5 V	r_DS(on) at 1.8 V	AD	r_DS(on) at 1.2 V	Q_g at 10 V (nC)	V_GS @ 10V	Total gate charge @ 4.5 V (nC)	Gate-source charge (nC)	Q_GD @ 10V	Gate-drain charge (nC)	Q_GD @ 6V	Drain current (max.) (A)	Power dissipation (max.) (W)	Vth V (V)	RgTyp.
IRF9510	TO-220AB	Single		P	-100	20	1.2								8.7			2.2		4.1		-4	43	-2
IRF9510S, SiHF9510S	D2PAK (TO-263)	Single		P	-100	20	1.2								8.7			2.2		4.1		-4	43	-2
IRF9520	TO-220AB	Single		P	-100	20	0.6								18			3		9		-6.8	60	-2
IRF9520S, SiHF9520S	D2PAK (TO-263)	Single		P	-100	20	0.6								18			3		9		-6.8	60	-2
IRF9530	TO-220AB	Single		P	-100	20	0.3								38			6.8		21		-12	88	-2
IRF9530S, SiHF9530S	D2PAK (TO-263)	Single		P	-100	20	0.3								38			6.8		21		-12	88	-2
IRF9540	TO-220AB	Single		P	-100	20	0.2								61			14		29		-19	150	-2
IRF9540S, SiHF9540S	D2PAK (TO-263)	Single		P	-100	20	0.2								61			14		29		-19	150	-2
IRF9610	TO-220AB	Single		P	-200	20	3								11			7		4		-1.8	20	-2
IRF9610S, SiHF9610S	D2PAK (TO-263)	Single		P	-200	20	3								11			7		4		-1.8	20	-2