VT3045CBP, VIT3045CBP PRODUCT INFORMATION

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A
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FEATURES

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

APPLICATIONS

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.


Showing 1 to 5 of 5 entries
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Application Notes
Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels
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Datasheet
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A
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General Information
Soldering Process
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Markings
Marking
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Product Literature
Schottky Rectifiers
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