Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A

pdf-icon-small Datasheet


Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation


For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.

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