V20120C, VI20120C PRODUCT INFORMATION

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
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FEATURES

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

APPLICATIONS

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.