V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 PRODUCT INFORMATION

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
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FEATURES

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.


Showing 1 to 13 of 13 entries
Document TypeTitleDescriptionShare
Application Notes
SUPERECTIFIER® Design Brings New Level of Reliability to Surface Mount Components
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Application Notes
Design Guidelines for Schottky Rectifiers
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Application Notes
High Speed Data Line Protection Low Current Bridges Rectifiers Lend Themselves to Data Line Protection
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Application Notes
Power Factor Correction with Ultrafast Diodes
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Application Notes
Rectifiers for Power Factor Correction (PFC)
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Application Notes
Physical Explanation
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Application Notes
Fundamentals of Rectifiers
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Datasheet
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
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General Information
Soldering Process
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Markings
Marking
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Packaging Information
Package Drawings
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Packaging Information
Packaging Information
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Product Literature
Schottky Rectifiers
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