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DETECTION AND INITIAL SAFETY DEVICES
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OPTOELECTRONICS
High Power Infrared Emitting Diode with Peak Wavelength of 940 nm in T-1¾ Package
  • Typical radiant intensity of 170 mW/sr at IF = 100 mA, 1450 mW/sr at IF = 1 mA
  • Angle of half intensity: ϕ = ± 10°
TSAL6100UL
TSAL6100UL
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SMALL SIGNAL DIODES
Small Signal Zener Diodes
  • ± 2 % Zener voltage tolerance from 4.7V to 47V
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Low leakage current, low noise
BZX884L
BZX884L
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FUSES
Thin Film Chip Fuses
  • Advanced thin film technology
  • Very quick acting fuse characteristics
  • Different current ratings and case sizes
MFU Series
MFU Series
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THIN FILM RESISTORS
Professional Thin Film Chip Resistors
  • Excellent overall stability, sulfur resistant
  • CECC approved acc. EN 140401-801
  • Professional tolerance of resistance:
    ± 0.5 % and ± 1 %
MCx Professional
MCx Professional
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TANTALUM CAPACITORS
vPolyTan™ Polymer Tantalum Capacitors
  • High-capacitance, low-ESR
    polymer tantalum capacitors
  • Higher voltage handling capability
    requires less voltage derating
  • Stable electrical performance over
    temperature and voltage
  • Small case size, low profile
T55 Series
T55 Series
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OPTOELECTRONICS
High Radiant Power and High Speed 850 nm Infrared Emitter
  • Radiant intensity up to 100 mW/sr with IF up to 1 A, 20 ns rise time, 13 ns fall time
  • Angle of half intensity: ϕ = ± 60° in PLCC2 package
VSMY2890GX01
VSMY2890GX01
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MOSFETs
Common Drain Dual N-Channel 60 V (S1-S2) MOSFET in PowerPAK® 1212-8SCD
  • Solution for designs seeking the highest power density
  • 65 % smaller than solutions in 6 mm x 5 mm² package
  • Easy routing of PCB
SiSF20DN
SiSF20DN
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SMALL SIGNAL DIODES
500 mW Zener diodes in < 0.6 mm low-profile MicroSMF (DO-219AC) package
  • Excellent stability for voltage stabilization and reference voltage generation
  • Zener diodes permitting 500 mW power dissipation
  • Green product, fully halogen-free
PLZ Series
PLZ Series
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POWER ICs
0.3 Ω, Low Voltage Dual SPDT Analog Switches
  • 1.65 V to 5.5 V single power operation
  • Dual single-pole/double-throw
  • 2.5 mm by 2.5 mm package
DG2535E
DG2535E
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ESD PROTECTION DIODES
Bidirectional Asymmetrical (BiAs) Single Line ESD Protection
  • Ultra compact DFN package 1/3 of SOT23. Higher power dissipation than SOT23
  • Only 8 pF capacitance, up to 30 kV air discharge
  • Only 8 pF, working range -7 V up to +14 V or -14 V up to +7 V
VCUT0714BHD1
VCUT0714BHD1
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OPTOELECTRONICS
4 Quadrat Silicon PIN Diode
  • 4 Pin diodes on one chip each 1.6 mm²
  • Allows spatial resolution
  • Wavelength 690 to 1050nm
K857PE
K857PE
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OPTOELECTRONICS
Silicon PIN Photodiode
  • Blue enhanced  350 to 1070nm 7.5 mm2 sensitive area
  • Robust and opaque package - low noise
  • Angle of half sensitivity: ϕ = ± 65°
VEMD5060X01
VEMD5060X01
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