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Charging Stations  /  Infrastructure for Vehicles and E-Bikes
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Charging Stations  /  Infrastructure for Vehicles and E-Bikes
Engineer's Toolbox
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FILM CAPACITORS
Metallized Polypropylene Film Capacitor, AC Filtering Radial Type
  • AC filter capacitor with high
    RMS current capabilities
  • Safe design using segmented film
MKP1847
MKP1847
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FILM CAPACITORS
Interference Suppression Film Capacitor - Class X1 Radial MKP 480 VAC
  • Internal series construction Stable capacitance in severe conditions 85 °C, 85%
  • 3-phase and continuous across the line X1 applications
  • Permissible up to 1000 VDC at 85 °C 800 VDC at 110°C
F339X1 480VAC
F339X1 480VAC
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THERMISTORS
PTC Thermistors, Inrush Current Limiter High Energy
  • Highly resistant against non-switching peak-powers of up to 25 kW
  • Can handle high direct voltage up to 1200 V
  • High number of inrush-power cycles: > 100 000 cycles
PTCEL High Energy Series
PTCEL High Energy Series
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POWER RECTIFIERS
SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 40 A
  • High speed switching, low switching losses in PFC
  • Virtually no recovery tail and no switching losses
  • Improved VF and efficiency by thin wafer technology
VS-SC40FA120
VS-SC40FA120
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MOSFETs
MaxSiC™ 1200 V N-Channel SiC MOSFET
  • Short circuit withstand time 3 μs
  • D2PAK 7L (TO-263 7L) 45mΩ and 1200V
  • Driver source pin
MXP120A045FE
MXP120A045FE
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MAGNETICS
Integrated LLC Transformer / Inductor
  • 5.5 kW transformer / inductor design for unidirectional LLC applications
  • Operating frequencies from 100 kHz to 350 kHz for 400 V to 800 V input
  • 2500VAC isolation. Customization on request
MRTI5R5EZ
MRTI5R5EZ
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FILM CAPACITORS
THB DC-Link Metallized Polypropylene Film Capacitors, Radial Type, 85 °C / 85 % RH 1000 h at UNDC
  • High robustness under high humidity: THB 85 °C / 85 % RH / 1000 h at rated voltage
  • High ripple current capability, low ESR, low ESL
  • Widest range of cases, voltages and capacitances
MKP1848H DC-Link
MKP1848H DC-Link
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MOSFETs
EMIPAK 2B PressFit Full Bridge Inverter Silicon Carbide MOSFET Power Modules
  • Substrate with low thermal resistance, input capacitance % internal inductance
  • VDSS 1200 V RDS(on) typical at ID = 20 A 71 mOhm
  • Customization on request
VS-ETY020P120F
VS-ETY020P120F
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POWER METAL STRIP
Power Metal Strip® Resistors, Low Value (Down to 0.0003 Ω), Surface-Mount
  • Power Metal Strip®  for all types of current sensing in pulse applications
  • Solid metal nickel-chrome, manganese-copper, or manganese-copper-tin alloy
  • High power up to 10W
WSLF
WSLF
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MOSFETs
N-Channel 100 V (D-S) 175 °C MOSFET
  • 8x8L package 50 % smaller footprint than D2PAK (TO-263)
  • Wide SOA with Spirito-Effect considered
  • only 1.9mΩ, Typical Rth of 0.36K/W
SiJH5100E
SiJH5100E
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INDUCTORS
High Current Through-Hole Inductors Edge-Wound Series
  • Powdered iron alloy core for stable inductance & saturation over operating temp
  • High temperature continuous operation, up to 180 °C with no aging
  • Isolation up to 350VDC - customization possible
IHDM-1008BC-x0
IHDM-1008BC-x0
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PROTECTION DIODES
Surface Mount XClampR™ Transient Voltage Suppressors
  • XClamp with extremely low clamping voltage vs. breakdown voltage
  • IPPM = 180 A with a 10/1000 μs waveform
  • TJ = 175 °C capability suitable for high reliability
XMC7K24CA
XMC7K24CA
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