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Engineer's Toolbox » Industrial » Access Control Systems / Door and Gate Openers
Access Control Systems / Door and Gate Openers
SURVEILLANCE SYSTEMS
Access Control Systems / Door and Gate Openers
Engineer's Toolbox
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ALUMINUM CAPACITORS
Hybrid Energy Storage Capacitors
  • Polarized electrochemical storage
    capacitor with high capacity and energy density
  • No cell balancing necessary, soft and low transient voltage controlled charging
  • Useful life: up to 2000 h at 85 °C
196 HVC ENYCAP™
196 HVC ENYCAP<sup>™</sup>
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MOSFETs
N-Channel 100 V (D-S) MOSFET
  • Latest TrenchFET® generation
  • Great safe operation area with clip technology
  • Only 3.6 m? in industry standard PowerPAK® SO-8
SiR510DP
SiR510DP
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POSITION: NON-CONTACTING
Single Turn Hall Effect Position Sensor
  • 10 M cycles, linearity ± 0.05 %, analog / digital output
  • Compact, absolute, versatile, easy to mount
  • Non contacting technology: Hall effect
981 HE
981 HE
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POWER ICs
4.5 V to 55 V Input, 3 A, 5 A, 8 A, 12 A, microBUCK® DC/DC Converters
  • Wide input voltage, high efficiency synchronous buck regulators
  • Versatile, highly efficient, highly configurable, and robust and reliable
  • Scalable output power with versions in identical package
SiC47x
SiC47x
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OPTOELECTRONICS
Fully Integrated Proximity and Ambient Light Sensor with I2C Interface
  • Integrated current driver with internal logic to drive up to three IREDs
  • Low-profile QFN SMD package, 16 bit resolution, proximity distance up to 200 mm
  • Up to 4 different slave addresses for more sensors on I2C bus
VCNL4035X01
VCNL4035X01
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OPTOELECTRONICS
IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications
  • Up to 2 m for presence and proximity sensing
  • Uses modulated bursts of infrared light
  • Simple signal processing possible
TSSP40..
TSSP40..
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OPTOELECTRONICS
High Sensitivity Long Distance Proximity and Ambient Light Sensor With I2C Interface
  • Proximity detection up to 1.5 m
  • Excellent sunlight cancellation feature
  • Emitter and detector in one package
VCNL4200
VCNL4200
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TVS PROTECTION DIODES
400 W Unidirectional TransZorb® TVS Diodes
  • 400 W peak pulse power capability with a 10/1000 µs waveform
  • Tolerance of the avalanche breakdown voltage ± 5 % VTVSxxxA... ± 2 % VTVSxxxG...
  • Online simulation tool available
VTVS3V3ASMF to VTVS63GSMF
VTVS3V3ASMF to VTVS63GSMF
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OPTOELECTRONICS
High Speed Infrared Emitting Diodes, 890 nm, Surface Emitter Technology
  • 890 nm emitting diode on GaAlAs surface emitter chip, high radiant intensity
  • High optical power and high speed
  • 0806 package with same output power as PLCC2
VSMY5890
VSMY5890
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OPTOELECTRONICS
High Speed PIN Photodiode with Infrared Light Blocking Filter
  • Profile height of 0.9 mm, SMD photodiode featuring chip with 7.5 mm2 sensitive area
  • Peak sensitivity at 540 nm with an excellent infrared light filter, blocking signals > 700 nm
  • Sensitivity close to human eye
VEMD5510CF
VEMD5510CF
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MOSFETs
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  • SkyFET®low side MOSFET with integrated Schottky
  • Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint
  • Ideal for DC-DC conversion with asymmetric Duty Cycle
SiZF300DT
SiZF300DT
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FUSES
Thin Film Chip Fuses
  • Advanced thin film technology
  • Very quick acting fuse characteristics
  • Different current ratings and case sizes
MFU Series
MFU Series
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